bzx85c series 1.3 watts zener diode do-41 features ? silicon planar power zener diodes ? for use in stabilizing and clipping circuits with high power rating ? the zener voltages are graded according to the international e24 standard. replace suffix ?c? mechanical data ? case: molded plastic do-41 ? polarity: color band denotes cathode end ? mounting position: any ? weight: 0.35 grams (approx.) dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 o cambient temperature unless otherwise specified. maximum ratings type number symbol value units power dissipation (note 1) pd 1.3 w thermal resistance junction to ambient air (note 1) r ja 130 o c /w operating and storage temperature range t j , t stg -55 to + 175 o c notes: 1. measured with pulses tp=5ms 2. valid provided that lead ar e kept at ambient temper ature at a distance of 10 mm from case.. 3. f = 1khz. http://www.luguang.cn mail:lge@luguang.cn
ratings and characteristic curves (bzx85c series) fig.1- pulse thermal resistance vs fig.3- dynamic resistance vs zener current fig.2- dynamic resistance vs zener current fig.4- thermal resistance vs lead length pulse duration fig.5- admissible power dissipation vs fig.6- dynamic resistance vs zener current ambient temperature bzx85c series 1.3 watts zener diode http://www.luguang.cn mail:lge@luguang.cn
ratings and characteristic curves (bzx85c series) fig.7- breakdown characteristics fig.8- breakdown characteristics bzx85c series 1.3 watts zener diode http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics (ta=25 o c unless otherwise noted) admissible zener device current f zt i zt f zt i zk (note 2) (note 3) (note 3) i r v r i z min max ohm ma ohms ma min max ua v ma bzx85c2v7 2.5 2.9 <20 80 <400 1 -0.08 -0.05 <150 1.0 360 bzx85c3v0 2.8 3.2 <20 80 <400 1 -0.08 -0.05 <100 1.0 330 bzx85c3v3 3.1 3.5 <20 80 <400 1 -0.08 -0.05 <40 1.0 300 bzx85c3v6 3.4 3.8 <20 60 <500 1 -0.08 -0.05 <20 1.0 290 bzx85c3v9 3.7 4.1 <15 60 <500 1 -0.07 -0.02 <10 1.0 280 bzx85c4v3 4 4.6 <13 50 <500 1 -0.05 0.01 <3 1.0 250 bzx85c4v7 4.4 5.0 <13 45 <600 1 -0.03 0.04 <3 1.0 215.0 bzx85c5v1 4.8 5.4 <10 45 <500 1 -0.01 0.04 <1 1.5 200.0 bzx85c5v6 5.2 6 <7 45 <400 1 0 0.045 <1 2.0 190.0 bzx85c6v2 5.8 6.6 <4 35 <300 1 0.01 0.055 <1 3.0 170.0 bzx85c6v8 6.4 7.2 <3.5 35 <300 1 0.015 0.06 <1 4.0 155.0 bzx85c7v5 7 7.9 <3 35 <200 0.5 0.02 0.065 <1 4.5 140.0 bzx85c8v2 7.7 8.7 <5 25 <200 0.5 0.03 0.07 <1 6.2 130.0 bzx85c9v1 8.5 9.6 <5 25 <200 0.5 0.035 0.075 <1 6.8 120.0 bzx85c10 9.4 10.6 <7 25 <200 0.5 0.04 0.08 <0.5 7.5 105.0 bzx85c11 10.4 11.6 <8 20 <300 0.5 0.045 0.08 <0.5 8.2 97.0 bzx85c12 11.4 12.7 <9 20 <350 0.5 0.045 0.085 <0.5 9.1 88.0 bzx85c13 12.4 14.1 <10 20 <400 0.5 0.05 0.085 <0.5 10 79.0 BZX85C15 13.8 15.6 <15 15 <500 0.5 0.055 0.09 <0.5 11 71.0 bzx85c16 15.3 17.1 <15 15 <500 0.5 0.055 0.09 <0.5 12 66.0 bzx85c18 16.8 19.1 <20 15 <500 0.5 0.06 0.09 <0.5 13 62.0 bzx85c20 18.8 21.2 <24 10 <600 0.5 0.06 0.09 <0.5 15 56.0 bzx85c22 20.8 23.3 <25 10 <600 0.5 0.06 0.095 <0.5 16 52.0 bzx85c24 22.8 25.6 <25 10 <600 0.5 0.06 0.095 <0.5 18 47.0 bzx85c27 25.1 28.9 <30 8 <750 0.25 0.06 0.095 <0.5 20 41.0 bzx85c30 28 32 <30 8 <1000 0.25 0.06 0.095 <0.5 22 36.0 bzx85c33 31 35 <35 8 <1000 0.25 0.06 0.095 <0.5 24 33.0 bzx85c36 34 38 <40 8 <1000 0.25 0.06 0.095 <0.5 27 30.0 bzx85c39 37 41 <50 6 <1000 0.25 0.06 0.095 <0.5 30 28.0 bzx85c43 40 46 <50 6 <1000 0.25 0.06 0.095 <0.5 33 26.0 bzx85c47 44 50 <90 4 <1500 0.25 0.06 0.095 <0.5 36 23.0 bzx85c51 48 54 <115 4 <1500 0.25 0.06 0.095 <0.5 39 21.0 bzx85c56 52 60 <120 4 <2000 0.25 0.06 0.095 <0.5 43 19.0 notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300us pulse width, period = 5ms. 3. f = 1khz. v z @ i zt current v zener voltage v z @ i z = i zt reverse leakag e temperature coefficient of % / o c zener voltage range (note 1) dynamic resistance bzx85c series 1.3 watts zener diode http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics (ta=25 o c unless otherwise noted) admissible zener device current f zt i zt f zt i zk (note 2) (note 3) ( note 3 ) i r v r i z min max ohm ma ohms ma min max ua v ma bzx85c62 58 66 <125 4.0 <2000 0.25 0.06 0.095 <0.5 47 16 bzx85c68 64 72 <130 4.0 <2000 0.25 0.055 0.095 <0.5 51 15 bzx85c75 70 80 <135 4.0 <2000 0.25 0.055 0.095 <0.5 56 14 bzx85c82 77 87 <200 2.7 <3000 0.25 0.055 0.095 <0.5 62 12 bzx85c91 85 96 <250 2.7 <3000 0.25 0.055 0.095 <0.5 68 10 bzx85c100 96 106 <350 2.7 <3000 0.25 0.055 0.095 <0.5 75 9.4 bzx85c110 104 116 <450 2.7 <4000 0.25 0.055 0.095 <0.5 82 8.6 bzx85c120 114 127 <550 2.0 <4500 0.25 0.055 0.095 <0.5 91 7.8 bzx85c130 124 141 <700 2.0 <5000 0.25 0.055 0.095 <0.5 100 7.0 BZX85C150 138 156 <1000 2.0 <6000 0.25 0.055 0.095 <0.5 110 6.4 bzx85c160 153 171 <1100 1.5 <6500 0.25 0.055 0.095 <0.5 120 5.8 bzx85c180 168 191 <1200 1.5 <7000 0.25 0.055 0.095 <0.5 130 5.2 bzx85c200 188 212 <1500 1.5 <8000 0.25 0.055 0.095 <0.5 150 4.7 notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300us pulse width, period = 5ms. 3. f = 1khz. zener voltage dynamic resistance temperature range (note 1) coefficient of v % / o c reverse leakag e zener voltage current v z @ i zt v z @ i z = i zt bzx85c series 1.3 watts zener diode http://www.luguang.cn mail:lge@luguang.cn
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